TSMC/NYCU 0.42 nm Epitaxial Al2O3 Interface for MoS2 Transistors

Track; not yet

Why

Peer-reviewed in Nature Electronics with concrete numbers (0.42 nm buffer, ~1 nm EOT, 0.45 mS/um), so the physics claim is credible and Crossref-verifiable — but the same sources name contact resistance, wafer-scale growth and uniformity as open, and the authors themselves decline manufacturing readiness. Nothing here is adoptable; it is a leading indicator for the post-silicon channel transition.

Next

Re-probe on two triggers: (a) any 300 mm wafer-scale replication of the epitaxial Al2O3 buffer with reported uniformity/yield statistics, and (b) an explicit TSMC roadmap statement placing 2D-channel devices on a node. Until then, log as research-stage only.