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Verification register Frontier Hardware & Quantum

Readiness verdict

ROHM 5th-Generation EcoSiC MOSFET

A dated reading of what is claimed, reported, and independently verified in the current evidence.

As of
2026-06-28
Revision
1
Method
v1.0.0

Current reading

The readiness gap, in one scan

AI-assisted assembly · derived results

Claimed
60

Public ambition and stated capability

Reported
57

Observed practitioner reporting

Verified
52

Independently supported evidence

Gap
+8

Claimed minus verified

Evidence strength Strong

Decision

What the current evidence supports

Human editorial judgment · 2026-06-28

Proceed with caution

Why
A quantified, generation-over-generation improvement from a top-tier SiC IDM with a shipping roadmap is credible, but the benefit is temperature-conditional and samples are still pre-production in a soft market.
Next
Obtain July-2026 discrete/module samples and bench RDS(on) across the full Tj range and switching losses vs ROHM Gen4 and competing trench parts; confirm the breakdown-voltage roadmap covers your target rail.

Constraints

Blockers

No named blocker is present in the current public projection.

Evidence summary

Derived counts

AI-assisted assembly

Total
6
Tier 1
0
Tier 2
3
Tier 3
3
Supports
2
Contradicts
2
Context
2
Latest observed
2026-04-22

Counts and dates only. Raw signals, private excerpts, trust records, and internal corpus material are not published here.

Publication record

Revisions

Initial public reading

This is the initial public reading. No earlier readiness change is recorded.

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