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Verification register Frontier Hardware & Quantum

Readiness verdict

onsemi Vertical GaN (vGaN)

A dated reading of what is claimed, reported, and independently verified in the current evidence.

As of
2026-06-28
Revision
1
Method
v1.0.0

Current reading

The readiness gap, in one scan

AI-assisted assembly · derived results

Claimed
45

Public ambition and stated capability

Reported
45

Observed practitioner reporting

Verified
41

Independently supported evidence

Gap
+4

Claimed minus verified

Evidence strength Strong

Decision

What the current evidence supports

Human editorial judgment · 2026-06-28

Track; not yet

Why
Genuinely differentiated GaN-on-GaN with strong efficiency/area claims and real IP + a US fab, but it is sampling-stage on a costly bulk-GaN substrate with no design-in-grade parameters published — too immature to commit a design to now
Next
Monitor onsemi's move from early-access sampling to qualified production and request datasheets (current rating, Rds(on), switching freq, AEC-Q/JEDEC qual) before any design-in

Constraints

Blockers

No named blocker is present in the current public projection.

Evidence summary

Derived counts

AI-assisted assembly

Total
6
Tier 1
0
Tier 2
5
Tier 3
1
Supports
4
Contradicts
1
Context
1
Latest observed
2025-11-01

Counts and dates only. Raw signals, private excerpts, trust records, and internal corpus material are not published here.

Publication record

Revisions

Initial public reading

This is the initial public reading. No earlier readiness change is recorded.

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