What is Renesas TP65H020G4PLSGBD dual-side-cooled GaN FET?

Renesas says AI hardware is pushing data-center power distribution to change, and that space and heat become the limits as racks draw more power. Gallium nitride (GaN) is a wide-band-gap semiconductor used in high-power and high-frequency devices. The TP65H020G4PLSGBD is a 650V GaN power transistor from Renesas, which makes GaN HEMTs (high-electron-mobility transistors, a common GaN switch type). It comes in a dual-side-cooled package, meaning heat leaves from both the top and the bottom instead of one side. Renesas says it targets the 800V DC/DC intermediate bus converter stage that steps power down to 48V, 12V or 6V, and describes it as handling more power in less space.

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