What is Infineon 300mm GaN Power Wafer?

Infineon's 300-millimeter GaN power wafer process fabricates gallium nitride power transistors on 300-millimeter silicon substrates instead of the smaller wafer sizes historically used for GaN, packing more chips onto each wafer. Gallium nitride power devices switch faster and lose less energy as heat than silicon equivalents, and moving the process to larger wafers is a manufacturing technique for producing these transistors at lower cost per device.