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Verification register Frontier Hardware & Quantum

Readiness verdict

Mitsubishi Electric Trench SiC-MOSFET Bare Dies

A dated reading of what is claimed, reported, and independently verified in the current evidence.

As of
2026-06-28
Revision
1
Method
v1.0.0

Current reading

The readiness gap, in one scan

AI-assisted assembly · derived results

Claimed
55

Public ambition and stated capability

Reported
51

Observed practitioner reporting

Verified
46

Independently supported evidence

Gap
+9

Claimed minus verified

Evidence strength Growing

Decision

What the current evidence supports

Human editorial judgment · 2026-06-28

Track; not yet

Why
Credible Tier-1 IDM with a strong proprietary-trench claim, but the public announcement is spec-free and pre-production, and the market backdrop is an oversupply correction — not a moment to lock in.
Next
Request the four bare-die datasheets + qualification data through Mitsubishi sales; benchmark RDS(on)/Eoss against ROHM Gen5 and Infineon trench before any design commitment.

Constraints

Blockers

No named blocker is present in the current public projection.

Evidence summary

Derived counts

AI-assisted assembly

Total
6
Tier 1
1
Tier 2
2
Tier 3
3
Supports
2
Contradicts
2
Context
2
Latest observed
2026-01-16

Counts and dates only. Raw signals, private excerpts, trust records, and internal corpus material are not published here.

Publication record

Revisions

Initial public reading

This is the initial public reading. No earlier readiness change is recorded.

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